A semiconductor X is made by doping a germanium crystal with indium (Z = 49). A second semiconductor Y is made by doping germanium crystal with arsenic (Z = 33). Both are joined end to end and connected to a battery as shown. Which of the following statements is correct? (a) X is p-type, Y is n-type and the junction is forward biased. (b) X is p-type, Y is n-type and the junction is reverse biased. (c) X is n-type, Y is p-type and the junction is forward biased. (d) X is n-type, Y is p-type and the junction is reverse biased.

Answer: (a). Indium (group 13, trivalent) makes Ge p-type, so X is p-type; Arsenic (group 15, pentavalent) makes Ge n-type, so Y is n-type. In the figure the longer (positive) plate of the battery is on the left, connected to X. Positive terminal to p side means forward bias. So the answer is (a).

A semiconductor X is made by doping a germanium crystal with indium… | MHT CET 2026 (17 Apr, Shift 2)

Q9MHT CET 2026 · 17 APR · SHIFT 2Medium

P-N Junction Diode

A semiconductor X is made by doping a germanium crystal with indium $(Z = 49)$ . A second semiconductor Y is made by doping germanium crystal with arsenic $(Z = 33)$ . Both are joined end to end and connected to a battery as shown. Which of the following statements is correct?

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Answer: (a)

Indium (group 13, trivalent) makes Ge p-type, so X is p-type; Arsenic (group 15, pentavalent) makes Ge n-type, so Y is n-type.
In the figure the longer (positive) plate of the battery is on the left, connected to X.
Positive terminal to p side means forward bias.
So the answer is (a).

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P-N Junction Diode question from MHT CET 2026 (17 Apr, Shift 2)

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