Application of a forward bias to a p-n junction (a) widens the depletion zone (b) increases the potential difference across the depletion zone (c) increases the number of donors on the n side (d) decreases the electric field in the depletion zone.

Answer: (d). Forward bias opposes the built-in potential, so the barrier height falls from V₀ to V₀ - V. The depletion zone narrows and the field across it, E ≈ (V₀ - V)/W, decreases. Doping (number of donors) is not changed by biasing. So the answer is (d).

Application of a forward bias to a p-n junction | NEET 2005 (AIPMT)

Q113NEET 2005 · AIPMTEasy

P-N Junction Diode

Application of a forward bias to a p-n junction

Show answer and solution

Answer: (d)

Forward bias opposes the built-in potential, so the barrier height falls from $V_0$ to $V_0 - V$ .
The depletion zone narrows and the field across it, $E \approx (V_0 - V)/W$ , decreases.
Doping (number of donors) is not changed by biasing.
So the answer is (d).

Report a mistake

Practise all 130 questions on P-N Junction Diode
All 45 questions from NEET 2005 (AIPMT)
Semiconductor Electronics: all topics and PYQs

P-N Junction Diode question from NEET 2005 (AIPMT)

More questions on P-N Junction Diode