In an n-p-n transistor in common emitter configuration when VBE is increased by small amount then (a) IB increases and IC increases proportionally (b) IB increases and IC remain constant (c) IB remain constant and IC increases (d) both IB and IC remain nearly constant

Answer: (a). Raising VBE increases forward bias of the base-emitter junction, so IB increases. In the active region IC = β IB, so IC also increases in proportion. So the answer is (a).

In an n-p-n transistor in common emitter configuration when VBE is… | MHT CET 2026 (15 May, Shift 1)

Q18MHT CET 2026 · 15 MAY · SHIFT 1Medium

Junction Transistor

In an n-p-n transistor in common emitter configuration when $V_{BE}$ is increased by small amount then

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Answer: (a)

Raising $V_{BE}$ increases forward bias of the base-emitter junction, so $I_B$ increases.
In the active region $I_C = \beta I_B$ , so $I_C$ also increases in proportion.
So the answer is (a).

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