In the reverse biasing of a p-n junction diode: (a) the width of the depletion layer decreases. (b) the width of the depletion layer increases. (c) the number of minority charge carriers increase. (d) the number of majority charge carriers increase.

Answer: (b). Reverse bias pulls holes and electrons away from the junction, exposing more fixed ions. Carrier numbers are set by doping and temperature, not by bias. So the answer is (b) the width of the depletion layer increases.

In the reverse biasing of a p-n junction diode: | MHT CET 2023 (9 May, Shift 2)

Q54MHT CET 2023 · 9 MAY · SHIFT 2Easy

P-N Junction Diode

In the reverse biasing of a p-n junction diode:

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Answer: (b)

Reverse bias pulls holes and electrons away from the junction, exposing more fixed ions.
Carrier numbers are set by doping and temperature, not by bias.
So the answer is (b) the width of the depletion layer increases.

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