The cause of the potential barrier in a p-n diode is (a) depletion of positive charges near the junction (b) concentration of positive charges near the junction (c) depletion of negative charges near the junction (d) concentration of positive and negative charges near the junction

Answer: (d). Uncovered positive donor ions on the n-side and negative acceptor ions on the p-side collect near the junction. This charge layer produces the electric field and hence the potential barrier. So the answer is (d) concentration of positive and negative charges near the junction.

The cause of the potential barrier in a p-n diode is | NEET 1998 (AIPMT)

Q125NEET 1998 · AIPMTEasy

P-N Junction Diode

The cause of the potential barrier in a $p\text{-}n$ diode is

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Answer: (d)

Uncovered positive donor ions on the n-side and negative acceptor ions on the p-side collect near the junction.
This charge layer produces the electric field and hence the potential barrier.
So the answer is (d) concentration of positive and negative charges near the junction.

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