The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the (a) crystal structure (b) variation of the number of charge carriers with temperature (c) type of bonding (d) variation of scattering mechanism with temperature

Answer: (b). In a metal the number of free electrons is fixed; rising temperature only increases scattering, so R rises. In a semiconductor the number of carriers rises sharply with temperature, so R falls. So the answer is (b) variation of the number of charge carriers with temperature.

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Intrinsic & Extrinsic Semiconductors

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

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Answer: (b)

In a metal the number of free electrons is fixed; rising temperature only increases scattering, so $R$ rises.
In a semiconductor the number of carriers rises sharply with temperature, so $R$ falls.
So the answer is (b) variation of the number of charge carriers with temperature.

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