When p-n junction diode is forward biased then (a) both the depletion region and barrier height are reduced (b) the depletion region is widened and barrier height is reduced (c) the depletion region is reduced and barrier height is increased (d) both the depletion region and barrier height are increased

Answer: (a). Forward voltage V opposes the built-in potential: barrier becomes V₀ - V (reduced). Majority carriers neutralise ions near the junction, so the depletion region also narrows. So the answer is (a).

When p-n junction diode is forward biased then | JEE Main 2004 (AIEEE)

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P-N Junction Diode

When $p\text{-}n$ junction diode is forward biased then

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Answer: (a)

Forward voltage $V$ opposes the built-in potential: barrier becomes $V_0 - V$ (reduced).
Majority carriers neutralise ions near the junction, so the depletion region also narrows.
So the answer is (a).

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