Which one of the following statements is true? A p-type semiconductor is doped with (a) trivalent impurity and electrons are majority carriers. (b) pentavalent impurity and electrons are minority carriers. (c) pentavalent impurity and holes are minority carriers. (d) trivalent impurity and holes are majority carriers.

Answer: (d). p-type: trivalent dopant (B, Al, Ga, In) creates a hole for each atom. So holes are majority carriers and electrons minority carriers. So the answer is (d).

Which one of the following statements is true? A p-type semiconductor… | MHT CET 2024 (3 May, Shift 2)

Q21MHT CET 2024 · 3 MAY · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

Which one of the following statements is true? A p-type semiconductor is doped with

Show answer and solution

Answer: (d)

p-type: trivalent dopant (B, Al, Ga, In) creates a hole for each atom.
So holes are majority carriers and electrons minority carriers.
So the answer is (d).

Report a mistake

More questions on Intrinsic & Extrinsic Semiconductors

If ' ne ' and ' nh ' are the number of electrons and number of holes respectively in a…MHT CET 2024 (11 May, Shift 1)
The acceptor level of a p-type semiconductor is 6 eV. The maximum wavelength of light…JEE Main 2024 (6 Apr, Shift 2)
To measure the temperature coefficient of resistivity α of a semiconductor, an electrical…JEE Main 2024 (1 Feb, Shift 2)
When the conductivity of a semiconductor is only due to the breaking of the covalent…MHT CET 2023 (14 May, Shift 2)
For an intrinsic semiconductor (nh and ne are the number of holes per unit volume and…MHT CET 2023 (9 May, Shift 1)
Doping of a semiconductor (with small impurity atoms) generally changes the resistivity…MHT CET 2023 (13 May, Shift 2)
A p-type extrinsic semiconductor is obtained when Germanium is doped with:NEET 2023
The resistivity (ρ) of semiconductor varies with temperature. Which of the following…JEE Main 2023 (6 Apr, Shift 1)

Intrinsic & Extrinsic Semiconductors question from MHT CET 2024 (3 May, Shift 2)

More questions on Intrinsic & Extrinsic Semiconductors