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Intrinsic & Extrinsic Semiconductors

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Q1MHT CET 2026 · 14 MAY · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

In an intrinsic semiconductor, at any ordinary temperature, the correct relation between the number of electrons per unit volume (nen_e) and number of holes per unit volume (nhn_h) is

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Answer: (a)

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Q2MHT CET 2026 · 18 APR · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

For intrinsic semiconductor, if nhn_h and nen_e represent the number of holes per unit volume and the number of free electrons per unit volume respectively then

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Answer: (c)

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Q3MHT CET 2026 · 11 APR · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

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Answer: (b)

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Q4MHT CET 2026 · 19 MAY · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

In the energy band diagram of a p-type semiconductor, the "Acceptor Energy Level" is located

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Answer: (d)

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Q5MHT CET 2026 · 15 MAY · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

At room temperature, a p-type semiconductor has

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Answer: (a)

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Q6MHT CET 2026 · 20 APR · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

In the band structure of n-type semiconductor, the free electrons donated by impurity atoms occupy energy levels in

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Answer: (c)

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Q7MHT CET 2026 · 19 APR · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

In n-type semiconductor

A) pentavalent impurity are dopants and holes are majority carriers.

B) trivalent impurity are dopants and electrons are minority carriers.

C) pentavalent impurity are dopants and electrons are majority carriers.

D) trivalent impurity are dopants and holes are majority carriers.

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Answer: (b)

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Q8MHT CET 2026 · 16 APR · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

When a small amount of impurity atoms are added to a semiconductor then generally its resistivity

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Answer: (b)

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Q9MHT CET 2026 · 12 MAY · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

Pure silicon crystal at 300300K has equal electron and hole concentration 2×10162 \times 10^{16} per m3{}^{3}. Doping by indium increases hole concentration to 4×10224 \times 10^{22} per m3{}^{3}. Electron concentration in doped silicon is

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Answer: (b)

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Q10MHT CET 2026 · 13 APR · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

A pure silicon crystal at temperature 300300 K has electron and hole concentration (nin_i) 101610^{16} per m3{}^{3} each and 102110^{21} phosphorus atoms (nen_e) are added per cubic metre. The new hole concentration in silicon crystal is

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Answer: (d)

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Q11MHT CET 2026 · 19 MAY · SHIFT 1Medium

Intrinsic & Extrinsic Semiconductors

The band diagrams of three semiconductors p, n and intrinsic are given in the figures (1), (2) and (3). C and V are the conduction and valence bands and EFE_F is the Fermi level. Figures, from (2),(1) and (3) respectively represent the type of semiconductors as

Figure

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Answer: (b)

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Q12MHT CET 2025 · 23 APR · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

Which of the following statements is TRUE for n-type semiconductor?

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Answer: (c)

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Q13MHT CET 2025 · 22 APR · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

In n-type semiconductor, free electrons donated by the impurity atoms occupy energy levels in

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Answer: (c)

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Q14MHT CET 2025 · 22 APR · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

In a pure silicon crystal electron-hole concentration is 101610^{16} per m3\text{m}^{3} at 301 K. Now 102110^{21} atoms of phosphorus are added per cubic metre. The new hole concentration in silicon is (in per m3\text{m}^{3})

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Answer: (b)

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Q15MHT CET 2025 · 25 APR · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

A piece of semiconductor is connected in series in an electric circuit. On increasing the temperature, the current in the circuit will

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Answer: (c)

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Q16MHT CET 2025 · 23 APR · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

By increasing the temperature, the specific resistance of a conductor and a semiconductor respectively

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Answer: (c)

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Q17MHT CET 2025 · 21 APR · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

Which graph shows correctly the temperature (T). dependence of resistivity (ρ)(\rho) of a semiconductor?

Figure

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Answer: (a)

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Q18JEE Main 2025 · 4 APR · SHIFT 2Medium

Intrinsic & Extrinsic Semiconductors

Consider a n-type semiconductor in which nen_e and nhn_h are number of electrons and holes, respectively.

(A) Holes are minority carriers

(B) The dopant is a pentavalent atom

(C) nenh≠ni2n_e n_h \neq n_i^2

(where nin_i is number of electrons or holes in semiconductor when it is intrinsic form) (D) nenh⩾ni2n_e n_h \geqslant n_i^2

(E) The holes are not generated due to the donors

Choose the correct answer from the options given below:

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Answer: (a)

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Q19MHT CET 2024 · 16 MAY · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

When a small amount of impurity atoms are added to semiconductor, then generally its resistivity

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Answer: (c)

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Q20MHT CET 2024 · 15 MAY · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

In an extrinsic n-type semiconductor, the free electrons donated by the impurity atoms occupy energy levels in

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Answer: (c)

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Q21MHT CET 2024 · 3 MAY · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

Which one of the following statements is true? A p-type semiconductor is doped with

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Answer: (d)

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Q22MHT CET 2024 · 11 MAY · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

If ' nen_e ' and ' nhn_h ' are the number of electrons and number of holes respectively in a semiconductor heavily doped with phosphorus then

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Answer: (a)

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Q23JEE Main 2024 · 6 APR · SHIFT 2Medium

Intrinsic & Extrinsic Semiconductors

The acceptor level of a p-type semiconductor is 6 eV6\text{ eV}. The maximum wavelength of light which can create a hole would be: Given hc=1242 eV nmhc = 1242\text{ eV nm}.

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Answer: (d)

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Q24JEE Main 2024 · 1 FEB · SHIFT 2Difficult

Intrinsic & Extrinsic Semiconductors

To measure the temperature coefficient of resistivity α\alpha of a semiconductor, an electrical arrangement shown in the figure is prepared. The arm BC is made up of the semiconductor. The experiment is being conducted at 25∘C25^\circ\text{C} and resistance of the semiconductor arm is 3 mΩ3\text{ m}\Omega. Arm BC\text{BC} is cooled at a constant rate of 2∘C/s2^\circ\text{C/s}. If the galvanometer G\text{G} shows no deflection after 10 s10\text{ s}, then α\alpha is:

Figure

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Answer: (a)

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Q25MHT CET 2023 · 14 MAY · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

When the conductivity of a semiconductor is only due to the breaking of the covalent bonds, the semiconductor is called

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Answer: (b)

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Q26MHT CET 2023 · 9 MAY · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

For an intrinsic semiconductor (nh(n_h and nen_e are the number of holes per unit volume and number of electrons per unit volume respectively)

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Answer: (b)

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Q27MHT CET 2023 · 13 MAY · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

Doping of a semiconductor (with small impurity atoms) generally changes the resistivity as follows.

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Answer: (a)

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Q28NEET 2023Easy

Intrinsic & Extrinsic Semiconductors

A p-type extrinsic semiconductor is obtained when Germanium is doped with:

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Answer: (d)

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Q29JEE Main 2023 · 6 APR · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

The resistivity (ρ)(\rho) of semiconductor varies with temperature. Which of the following curve represents the correct behaviour:

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Answer: (d)

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Q30JEE Main 2023 · 31 JAN · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

The effect of increase in temperature on the number of electrons in conduction band (nen_e) and resistance of a semiconductor will be as:

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Answer: (c)

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Q31JEE Main 2023 · 1 FEB · SHIFT 1Medium

Intrinsic & Extrinsic Semiconductors

Match List I with List II:

Choose the correct answer from the options given below:

List IList II
A.Intrinsic semiconductorI.Fermi-level near the valence band
B.n-type semiconductorII.Fermi-level in the middle of valence and conduction band.
C.p-type semiconductorIII.Fermi-level near the conduction band
D.MetalsIV.Fermi-level inside the conduction band
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Answer: (d)

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Q32MHT CET 2023 · 10 MAY · SHIFT 2Medium

Intrinsic & Extrinsic Semiconductors

A pure Si\text{Si} crystal has 4×10284 \times 10^{28} atoms per m3\text{m}^{3}. It is doped by 1 ppm concentration of antimony. The number of free electrons available will be

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Answer: (c)

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Q33NEET 2022 · PHASE 1Easy

Intrinsic & Extrinsic Semiconductors

As the temperature increases, the electrical resistance

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Answer: (c)

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Q34JEE Main 2021 · 26 AUG · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

Statement I: By doping silicon semiconductor with pentavalent material, the electrons density increases.

Statement II: The n-type semiconductor has net negative charge.

In the light of the above statements, choose the most appropriate answer from the options given below:

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Answer: (a)

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Q35MHT CET 2021 · 21 SEP · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

In a pure silicon, number of electrons and holes per unit volume are 1.6×1016 m−31.6 \times 10^{16}\text{ m}^{-3}. If silicon is doped with Boron in a way that on doping hole density increases to 4×1022 m−34 \times 10^{22}\text{ m}^{-3}. Then electron density in doped semiconductor will be

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Answer: (b)

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Q36JEE Main 2021 · 25 JUL · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

In a semiconductor, the number density of intrinsic charge carries at 27∘^\circC is 1.5 ×\times 1016/m3. If the semiconductor is doped with impurity atom, the hole density increases to 4.5 ×\times 1022/m3. The electron density in the doped semiconductor is ___________ ×\times 109/m3.

Numerical answer type. Work it out, then open the answer.

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Answer: 5

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Q37MHT CET 2021 · 23 SEP · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

When the temperature of a semiconductor is increased, its resistance and electric conductivity respectively.

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Answer: (d)

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Q38JEE Main 2021 · 25 FEB · SHIFT 2Medium

Intrinsic & Extrinsic Semiconductors

For extrinsic semiconductors; when doping level is increased;

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Answer: (d)

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Q39NEET 2021Medium

Intrinsic & Extrinsic Semiconductors

The electron concentration in an n-type semiconductor is the same as hole concentration in a p-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.

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Answer: (d)

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Q40MHT CET 2021 · 20 SEP · SHIFT 1Medium

Intrinsic & Extrinsic Semiconductors

Silicon and copper are cooled from 300 K to 100 K, the specific resistance (resistivity)

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Answer: (c)

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Q41MHT CET 2020 · 19 OCT · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

In an intrinsic semiconductor, at an ordinary temperature, the correct relation between the number of electrons per unit volume nen_e and number of holes per unit volume nhn_h.

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Answer: (a)

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Q42MHT CET 2020 · 16 OCT · SHIFT 1Easy

Intrinsic & Extrinsic Semiconductors

When a small amount of impurity atoms are added to a semiconductor, then generally its resistivity

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Answer: (c)

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Q43NEET 2020 · PHASE 2Easy

Intrinsic & Extrinsic Semiconductors

An intrinsic semiconductor is converted into nn-type extrinsic semiconductor by doping it with

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Answer: (b)

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Q44MHT CET 2020 · 16 OCT · SHIFT 2Easy

Intrinsic & Extrinsic Semiconductors

At absolute zero temperature, pure silicon behaves as

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Answer: (b)

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Q45NEET 2019Easy

Intrinsic & Extrinsic Semiconductors

For a p-type semiconductor, which of the following statements is true?

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Answer: (a)

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Q46JEE Main 2019 · 9 JAN · SHIFT 1Medium

Intrinsic & Extrinsic Semiconductors

Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n-type semiconductor, the density of electrons is 1019 m−3{}^{-3} and their mobility is 1.6 m2/(V.s) then the resistivity of the semiconductor (since it is an n-type semiconductor contribution of holes is ignored) is close to:

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Answer: (c)

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Q47JEE Main 2017 · 8 APR · SHIFT 1Medium

Intrinsic & Extrinsic Semiconductors

What is the conductivity of a semiconductor sample having electron concentration of 5×1018 m−3,5 \times 10^{18}\text{ m}^{-3}, hole concentration of 5×1019 m−3,5 \times 10^{19}\text{ m}^{-3}, electron mobility of 2.0 m2 V−1{}^{-1} s-1 and hole mobility of 0.01 m2 V−1{}^{-1} s−1{}^{-1}?

(Take charge of electron as 1.6 ×\times 10 −-19 C)

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Answer: (a)

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Q48JEE Main 2016Difficult

Intrinsic & Extrinsic Semiconductors

The temperature dependence of resistance of Cu\text{Cu} and undoped Si\text{Si} in the temperature range 300−400 K,300 - 400\text{ K}, is best described by:

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Answer: (a)

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Q49NEET 2013Easy

Intrinsic & Extrinsic Semiconductors

In a n-type semiconductor, which of the following statements is true?

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Answer: (a)

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Q50NEET 2011 · AIPMT · PRELIMSEasy

Intrinsic & Extrinsic Semiconductors

If a small amount of antimony is added to germanium crystal

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Answer: (c)

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Q51NEET 2011 · AIPMT · MAINSEasy

Intrinsic & Extrinsic Semiconductors

Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5 ×\times 1016 m−3{}^{-3}. Doping by indium increases nh to 4.5 ×\times 1022 m−3{}^{-3}. The doped semiconductor is of

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Answer: (a)

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Q52NEET 2010 · AIPMT · PRELIMSEasy

Intrinsic & Extrinsic Semiconductors

Which one of the following statement is false?

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Answer: (b)

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Q53NEET 2007 · AIPMTMedium

Intrinsic & Extrinsic Semiconductors

In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is

Figure

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Answer: (d)

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Q54JEE Main 2006 · AIEEEMedium

Intrinsic & Extrinsic Semiconductors

If the ratio of the concentration of electrons to that of holes in a semiconductor is 75\frac{7}{5} and the ratio of currents is 74,\frac{7}{4}, then what is the ratio of their drift velocities?

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Answer: (c)

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Q55JEE Main 2004 · AIEEEEasy

Intrinsic & Extrinsic Semiconductors

A piece of copper and another of germanium are cooled from room temperature to 77 K,77\text{ K}, the resistance of

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Answer: (d)

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Q56JEE Main 2003 · AIEEEEasy

Intrinsic & Extrinsic Semiconductors

A strip of copper and another of germanium are cooled from room temperature to 80 K.80\text{ K}. The resistance of

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Answer: (c)

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Q57JEE Main 2003 · AIEEEMedium

Intrinsic & Extrinsic Semiconductors

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

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Answer: (b)

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Q58JEE Main 2002 · AIEEEEasy

Intrinsic & Extrinsic Semiconductors

At absolute zero, Si acts as

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Answer: (c)

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Q59JEE Main 2002 · AIEEEEasy

Intrinsic & Extrinsic Semiconductors

By increasing the temperature, the specific resistance of a conductor and a semiconductor

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Answer: (c)

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Q60NEET 1999 · AIPMTEasy

Intrinsic & Extrinsic Semiconductors

Which of the following when added as an impurity into silicon produces nn-type semiconductor?

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Answer: (a)

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Q61NEET 1999 · AIPMTEasy

Intrinsic & Extrinsic Semiconductors

In a junction diode, the holes are due to

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Answer: (d)

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Q62NEET 1999 · AIPMTEasy

Intrinsic & Extrinsic Semiconductors

In pp-type semiconductor, the major charge carriers are

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Answer: (a)

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Q63NEET 1997 · AIPMTEasy

Intrinsic & Extrinsic Semiconductors

To obtain a p-type germanium semiconductor, it must be doped with

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Answer: (a)

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Q64NEET 1996 · AIPMTEasy

Intrinsic & Extrinsic Semiconductors

When arsenic is added as an impurity to silicon, the resulting material is

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Answer: (b)

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Q65NEET 1992 · AIPMTEasy

Intrinsic & Extrinsic Semiconductors

A piece of copper and other of germanium are cooled from the room temperature to 80 K80\text{ K}, then

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Answer: (d)

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Q66NEET 1989 · AIPMTMedium

Intrinsic & Extrinsic Semiconductors

When n type semiconductor is heated

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Answer: (d)

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Q67NEET 1988 · AIPMTEasy

Intrinsic & Extrinsic Semiconductors

At absolute zero, Si acts as

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Answer: (c)

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