P-N Junction Diode

In the middle of the depletion region of reversed biased p-n junction the

The depletion region of p-n junction

The forward biased diode connection is

A diode and resistance are connected as shown in figures.

Out of the following statements, which one is true?

Diode in

A) fig (1) and fig (2) are both forward biased.

B) fig (1) and fig (2) are both reverse biased.

C) fig (1) is forward biased and in fig (2) is reverse biased.

D) fig (1) is reverse biased and in fig (2) is forward biased.

For a p-n junction diode, breakdown voltage occurs when

If p-n junction diode is forward biased then

Two statements are given below:

A. When the forward bias voltage across a p-n junction diode increases above a certain threshold voltage, the diode current increases significantly.

B. This current is called reverse saturation current.

Choose the correct answer from the options given below:

In a semiconductor $p$-n diode, the doping concentrations on $p$-side and $n$-side are $10^{15}$ atoms $/\text{cm}^{3}$ and $10^{18}$ atoms $/\text{cm}^{3}$, respectively. Which one of the following statements is true?

A semiconductor X is made by doping a germanium crystal with indium $(Z = 49)$. A second semiconductor Y is made by doping germanium crystal with arsenic $(Z = 33)$. Both are joined end to end and connected to a battery as shown. Which of the following statements is correct?

Three identical p-n junction diodes $D_1, D_2$, and $D_3$ are connected across a battery as shown in the figure. If the width of the depletion regions of $D_1, D_2$ and $D_3$ are $W_1, W_2$ and $W_3$, respectively, then the correct option is:

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason $\mathbf{R}$

Assertion A: A diode under reverse-biased condition provides very small current which is nearly independent of voltage until a critical limit at which the current increases drastically. Reason R: Below the critical voltage limit, only majority charge carriers flow which increases drastically above critical voltage.

choose the correct answer from the options given below

The circuit shown contains two ideal diodes $D_1$ and $D_2$. If a cell of e.m.f. $3$V and negligible internal resistance is connected, then the current through $70\ \Omega$ resistance in ampere is

In one branch, $40\ \Omega$ resistance and a p-n junction diode are connected in series and in another branch, $40\ \Omega$ resistance is connected. Both the branches are connected in parallel to each other. The total resistance of the circuit when a) diode is forward biased and when b) diode is reverse biased respectively are {consider the p-n junction diode as an ideal diode}

In the following electrical circuit, the reading in the milliammeter is

(Take knee voltage of silicon diode $= 0.7$ V)

In the circuit shown in figure all the three diodes D1, D2, D3 have forward resistance $50\ \Omega$ each and infinite backward resistance. If the battery voltage is 5V, the current through $100\ \Omega$ resistance is

In the diagram shown, the resistance between points A and B is '$R_1$' when an ideal diode D is forward biased and is '$R_2$ ' when ideal diode D is reverse biased. The ratio $R_1/R_2$ is

The current / in the circuit shown below is: (All diodes are ideal and identical)

Assuming in forward bias condition there is a voltage drop of 0.7 V across a silicon diode, the current through diode $D_1$ in the circuit is ______ mA.

(Assume all diodes in the given circuit are identical)

In the circuit shown below, the voltage appearing across the diode D will be of the form:

The charge stored by the capacitor C in the given circuit in the steady state is __________ µC.

Consider a circuit consisting of a capacitor $(20\,\mu\text{F})$, resistor $(100\,\Omega)$ and two identical diodes as shown in figure. The resistance of diode under forward biasing condition is $10\,\Omega$. The time constant of the circuit is $\alpha \times 10^{-3}\text{ s}$. The value of $\alpha$ is ______

For the given circuit (shown in part (A)) the time dependent input voltage $v_{in}(t)$ and corresponding output $v_{o}(t)$ are shown in part (B) and part (C), respectively. Identify the components that are used in the circuit between points X and Y.

In the depletion layer of reverse biased p-n junction, the

Which of the following figure represents forward bias diode?

If p-n junction diode is forward biased, then

Applying forward bias to p-n junction, the potential barrier

In which of the following figures, the p.n. junction diode is reverse biased?

Which of the following circuits represents a forward biased diode?

Choose the correct answer from the options given below:

For an ideal diode, in forward and reverse biased condition the resistance is respectively

In unbiased p-n junction diode

If the internal resistance of cell is negligible then current flowing through the circuit is

In the following circuit shown in figure, three diodes are connected each with forward resistance $40\ \Omega$ and infinite backward resistance. The current through $100\ \Omega$ resistance is

What is the current through the battery in the circuit shown below?

Refer to the circuit diagram given in the figure. which of the following observations are correct? A. Total resistance of circuit is $6\ \Omega$

B. Current in Ammeter is 1 A

C. Potential across $AB$ is 4 Volts.

D. Potential across CD is 4 Volts

E. Total resistance of the circuit is $8\ \Omega$.

Choose the correct answer from the options given below:

The output voltage in the following circuit is (Consider ideal diode case)

The depletion layer in p-n junction region is caused by

The potential barrier in p-n junction diode is due to

A p-n junction diode cannot be used

A semiconductor device X is connected in series with a battery and a resistor. The current of 10 mA is found to pass through the circuit. If the terminals of X are connected in reverse manner, the current drops to almost zero. X may be

Which of the following circuits is reverse - biased?

Assuming that junction diode is ideal, the current in arrangement shown in figure

If the $p\text{-}n$ junction diode is unbiased,

Which of the diode circuits shows correct biasing used for the measurement of dynamic resistance of p-n junction diode:

What is the current in the following junction diode circuit?

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is

For the diagram shown, the resistance between points A and B when the ideal diode ' $D$ ' is forward biased is ' $R_1$ ' and that when reverse biased is ' $R_2$ '. The ratio $\frac{R_1}{R_2}$ is

Find the magnitude of current in the given circuit.

The value of net resistance of the network as shown in the given figure is:

In the given circuit, the voltage across load resistance (R${}_L$) is:

On increasing the reverse bias to a large value in a P-N junction diode, current

In which figure, the junction diode is forward biased?

When forward bias is applied to a p-n junction, then what happens to the potential barrier $(V_B)$ and the width $(X)$ of the depletion region?

If $p\text{-}n$ junction diode is in forward bias then

In the reverse biasing of a p-n junction diode:

Statement I: When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semi conductor such that P-type has excess holes and N-type has excess electrons.

Statement II: When such P-type and N-type semi-conductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ameter. In the light of above statements, choose the most appropriate answer from the options given below

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R

Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.

Reason R: Diffusion current in a p-n junction is from the $n$-side to the p-side if the junction is forward biased.

In the light of the above statements, choose the most appropriate answer from the options given below

For the diagram shown, the resistances between points A and B when ideal diode D is forward biased is '$R_1$' and that when reverse biased is '$R_2$'. The ratio $R_1 : R_2$ is

In the given circuit, the current (I) through the battery will be

If each diode has a forward bias resistance of $25\ \Omega$ in the below circuit,

Which of the following options is correct:

If the potential barrier across a p-n junction is $0.6\text{ V}$. Then the electric field intensity, in the depletion region having the width of $6 \times 10^{-6}\text{ m}$, will be __________ $\times 10^{5}\text{ N/C}$.

For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode:

The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2 V and 4 V respectively, is:

The given circuit has two ideal diodes $D_1$ and $D_2$ connected as shown in the figure. The current flowing through the resistance $R_1$ will be

In the given circuits (a), (b) and (c), the potential drop across the two p-n junctions are equal in

Two ideal diodes are connected in the network as shown in figure. The equivalent resistance between A and B is __________ $\Omega$.

The cut-off voltage of the diodes (shown in figure) in forward bias is 0.6 V. The current through the resistor of 40 $\Omega$ is __________ mA.

As per the given circuit, the value of current through the battery will be ____________ A.

A potential barrier of 0.4 V exists across a p-n junction. An electron enters the junction from the n- side with a speed of 6.0 $\times$ 105 ms${}^{-1}$. The speed with which electron enters the p side will be $\frac{x}{3} \times 10^{5}$ ms${}^{-1}$ the value of x is _____________.

(Given mass of electron = 9 $\times$ 10$-$31 kg, charge on electron = 1.6 $\times$ 10$-$19 C.)

In the given circuit the input voltage Vin is shown in figure. The cut-in voltage of p-n junction diode (D1 or D2) is 0.6 V. Which of the following output voltage (V0) waveform across the diode is correct?

For the forward biased diode characteristics shown in the figure, the dynamic resistance at ID = 3 mA will be __________ $\Omega$.

Two identical ideal diodes are connected to an ammeter and a d.c source (1 volt) as shown. In which one of the following circuits, ammeter will not show any deflection?

What are the values of the currents flowing in each of the following diode circuits $\text{X}$ and $\text{Y}$ respectively? (Assume that the diodes are ideal)

In an ideal junction diode, the current flowing through PQ is

The current in the following circuit is

In the given figure, each diode has a forward bias resistance of 30$\Omega$ and infinite resistance in reverse bias. The current I1 will be:

A 5V battery is connected across the points X and Y. Assume D1 and D2 to be normal silicon diodes. Find the current supplied by the battery if the +ve terminal of the battery is connected to point X.

The circuit contains two diodes each with a forward resistance of 50$\Omega$ and with infinite reverse resistance. If the battery voltage is 6V, the current through the 120$\Omega$ resistance is ____________ mA.

In connection with the circuit drawn below, the value of current flowing through 2 k$\Omega$ resistor is _________ $\times$ 10$-$4 A.

The increase in the width of the depletion region in a p-n junction diode is due to:

Out of the following which one is a forward biased diode?

When a diode is forward biased, it has a voltage drop of 0.5 V. The safe limit of current through the diode is 10 mA. If a battery of emf 1.5 V is used in the circuit, the value of minimum resistance to be connected in series with the diode so that the current does not exceed the safe limit is

Which of the following will NOT be observed when a multimeter (operating in resistance measuring mode) probes connected across a component, are just reversed?

The current i in the network is:

In the figure, potential difference between A and B is:

Two identical capacitors A and B, charged to the same potential 5V are connected in two different circuits as shown below at time t = 0. If the charge on capacitors A and B at time t = CR is QA and QB respectively, then (Here e is the base of natural logarithm)

Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward biased. Built in potential in each diode is 0.7 V. For the input voltages shown in the figure, the voltage (in Volts) at point A is __________.

In case of $p$-n junction diode, the width of depletion region is

Assuming that the junction diode is ideal, the current in the arrangement shown in figure is

The circuit shown below contains two ideal diodes, each with a forward resistance of 50 $\Omega$. If the battery voltage is 6 V, the current through the 100 $\Omega$ resistance (in Amperes) is:

Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of V0 changes by: (assume that the Ge diode has large breakdown voltage)

In a p-n junction diode, change in temperature due to heating

The reading of the ammeter for a silicon diode in the given circuit is:

Which one of the following represents forward bias diode?

The V-I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is:

Consider the junction diode as ideal. The value of current flowing through AB is

The given circuit has two ideal diodes connected as shown in the figure. The current flowing through the resistance R1 will be

In an unbiased n-p junction electrons diffuse from n - region to p - region because:

In the given figure, a diode D is connected to an external resistance R = 100 $\Omega$ and an e.m.f. of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be

A 2V battery is connected across AB as shown in the figure. The value of the current supplied by the battery when in one case battery's positive terminal is connected to A and in other case when positive terminal of battery is connected to B will respectively be:

If in a p-n junction, a square input signal of 10 V is applied, as shown,

then the output across RL will be

The forward biased diode connection is:

The barrier potential of a p-n junction depends on

(1) type of semiconductor material

(2) amount of doping

(3) temperature

Which one of the following is correct?

The current voltage relation of diode is given by $I = \left(e^{1000V/T} - 1\right)\text{ mA},$ where the applied voltage $V$ is in volts and the temperature $T$ is in degree kelvin. If a student makes an error measuring $\pm 0.01\,V$ while measuring the current of $5\,mA$ at $300\,K,$ what will be the error in the value of current in $mA$?

In an unbiased p-n junction, holes diffuse from the p-region to n-region because of

Figure shows a circuit in which three identical diodes are used. Each diode has forward resistance of 20$\Omega$ and infinite backward resistance. Resistors $R_1 = R_2 = R_3 = 50\ \Omega$. Battery voltage is 6 V. The current through $R_3$ is:

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is

In forward biasing of the p-n junction

In the following figure, the diodes which are forward biased, are

If in a $p\text{-}n$ junction diode, a square input signal of $10\text{ V}$ is applied as shown

Then the output signal across $R_L$ will be

Which one of the following represents forward bias diode?

In the following, which one of the diodes is reverse biased?

The circuit has two oppositively connected ideal diodes in parallel. What is the current following in the circuit?

Application of a forward bias to a p-n junction

Of the diodes shown in the following diagrams, which one is reverse biased?

When $p\text{-}n$ junction diode is forward biased then

In the middle of the depletion layer of a reverse- biased $p\text{-}n$ junction, the

Reverse bias applied to a junction diode

Barrier potential of a p-n junction diode does not depened on

In a p-n junction

For the given circuit of p-n junction diode which is correct

The current in the circuit will be

From the following diode circuit, which diode is in forward biased condition

Depletion layer consists of

In forward bias the width of depletion layer in a $p\text{-}n$ junction diode

The cause of the potential barrier in a $p\text{-}n$ diode is

A semi-conducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be

The diode used in the circuit shown in the figure has a constant voltage drop at $0.5\text{ V}$ at all currents and a maximum power rating of 100 milli watts. What should be the value of the resistor $R$, connected in series with diode for obtaining maximum current?

In the case of forward biasing of p-n junction, which one of the following figures correctly depicts the direction of flow of carriers?

The depletion layer in the p-n junction region is caused by

p-n junction is said to be forward biased, when